Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Y. Ikuma; Y. Shoji; M. Kuwahara; X. Wang; K. Kintaka; H. Kawashima; D. Tanaka; H. Tsuda

doi:10.1049/el.2010.3588

Small-sized optical gate switch using Ge₂Sb₂Te ₅ phase-change material integrated with silicon waveguide

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

An optical gate switch using Ge₂Sb₂Te₅ phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

Original language	English
Pages (from-to)	368-369
Number of pages	2
Journal	Electronics Letters
Volume	46
Issue number	5
DOIs	https://doi.org/10.1049/el.2010.3588
Publication status	Published - 2010 Mar 19

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.3588

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abstract = "An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.",

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AU - Ikuma, Y.

AU - Shoji, Y.

AU - Kuwahara, M.

AU - Wang, X.

AU - Kintaka, K.

AU - Kawashima, H.

AU - Tanaka, D.

AU - Tsuda, H.

PY - 2010/3/19

Y1 - 2010/3/19

N2 - An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

AB - An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

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JO - Electronics Letters

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Small-sized optical gate switch using Ge₂Sb₂Te ₅ phase-change material integrated with silicon waveguide

Abstract

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