Abstract
We prepared LaNiO3 (LNO) films on SiO2 glass substrates by a sol-gel method. Effects of heating conditions on the orientation, morphology and electrical properties of the films were investigated. Preferentially (100)-oriented LNO films could be formed on the glass substrate by controlling carefully the heat-treatment process. The optimal condition led to the formation of the film with low resistivity of 585 μΩcm, orientation factor of 1.00 and dense microstructure.
Original language | English |
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Pages (from-to) | 93-96 |
Number of pages | 4 |
Journal | Key Engineering Materials |
Volume | 216 |
Publication status | Published - 2001 Jan 1 |
Event | 20th Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan Duration: 2000 Oct 26 → 2000 Oct 27 |
Keywords
- Electrode
- LaNiO
- Metallic conductivity
- Orientation
- Sol-gel method
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering