Sol-gel processing of oxide gate insulator from trifluoroacetate precursors

Keisuke Yamamoto, Shinobu Fujihara, Toshio Kimura

Research output: Contribution to journalConference articlepeer-review


A La2O3 gate insulator was prepared via LaOF on a silicon substrate to suppress the interface reaction between the gate insulator and silicon substrate. LaOF was formed by heating the precursor solution containing La(NO3)3, acetylacetone and trifluoroacetic acid at 400-700°C in N2. By heating LaOF film at 700°C for 30 min in air, fluorine eliminated completely and La2O3 was formed. But silicon-oxide was formed at interface between LaOF heated at 400°C in N2 and the silicon substrate. To suppress the interface reaction, preparation of the fluoride on silicon will be needed.

Original languageEnglish
Pages (from-to)259-262
Number of pages4
JournalKey Engineering Materials
Publication statusPublished - 2002 Jan 1
EventAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
Duration: 2001 Oct 12001 Oct 1


  • Fluoride
  • Lanthanum Oxide
  • Oxyfluoride
  • Thin Film

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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