TY - JOUR
T1 - Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks
AU - Ishizu, Shuntaro
AU - Sasaki, Kento
AU - Misonou, Daiki
AU - Teraji, Tokuyuki
AU - Itoh, Kohei M.
AU - Abe, Eisuke
N1 - Funding Information:
T.T. was supported by the JSPS Grant-in-Aid for Scientific Research (KAKENHI) (B) (Grant No. 20H02187), (B) (Grant No. 19H02617), (S) (Grant No. 16H06326), the JST CREST (No. JPMJCR1773), and the MEXT Q-LEAP (No. JPMXS0118068379). K.M.I. was supported by the JSPS KAKENHI (S) (Grant No. 26220602) and (B) (Grant No. 19H02547), the JST Development of Systems and Technologies for Advanced Measurement and Analysis (SENTAN), and the Spintronics Research Network of Japan (Spin-RNJ). The authors thank the technical staff of Central Service Facilities for Research at Keio University for their assistance in XPS measurements.
Funding Information:
K.S. was supported by the JSPS Grant-in-Aid for Research Fellowship for Young Scientists (DC1) (Grant No. JP17J05890). T.T. was supported by the JSPS Grant-in-Aid for Scientific Research (KAKENHI) (B) (Grant No. 20H02187), (B) (Grant No. 19H02617), (S) (Grant No. 16H06326), the JST CREST (No. JPMJCR1773), and the MEXT Q-LEAP (No. JPMXS0118068379). K.M.I. was supported by the JSPS KAKENHI (S) (Grant No. 26220602) and (B) (Grant No. 19H02547), the JST Development of Systems and Technologies for Advanced Measurement and Analysis (SENTAN), and the Spintronics Research Network of Japan (Spin-RNJ). The authors thank the technical staff of Central Service Facilities for Research at Keio University for their assistance in XPS measurements.
Publisher Copyright:
© 2020 Author(s).
PY - 2020/6/28
Y1 - 2020/6/28
N2 - We characterize single nitrogen-vacancy (NV) centers created by 10 - keV N + ion implantation into diamond via thin SiO 2 layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N + ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and x-ray photoelectron spectroscopy.
AB - We characterize single nitrogen-vacancy (NV) centers created by 10 - keV N + ion implantation into diamond via thin SiO 2 layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N + ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and x-ray photoelectron spectroscopy.
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U2 - 10.1063/5.0012187
DO - 10.1063/5.0012187
M3 - Article
AN - SCOPUS:85088052129
SN - 0021-8979
VL - 127
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 24
M1 - 244502
ER -