Spin current transport in ceramic: TiN thin film

Hongyu An; Yusuke Kanno; Takaharu Tashiro; Yoshio Nakamura; Ji Shi; Kazuya Ando

doi:10.1063/1.4944777

Spin current transport in ceramic: TiN thin film

Hongyu An, Yusuke Kanno, Takaharu Tashiro, Yoshio Nakamura, Ji Shi, Kazuya Ando

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni₂₀Fe₈₀ with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.

Original language	English
Article number	121602
Journal	Applied Physics Letters
Volume	108
Issue number	12
DOIs	https://doi.org/10.1063/1.4944777
Publication status	Published - 2016 Mar 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4944777

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title = "Spin current transport in ceramic: TiN thin film",

abstract = "The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni20Fe80 with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.",

author = "Hongyu An and Yusuke Kanno and Takaharu Tashiro and Yoshio Nakamura and Ji Shi and Kazuya Ando",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Nos. 26220604, 26103004, 26600078, PRESTO-JST Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers, the Mitsubishi Foundation, the Asahi Glass Foundation, the Mizuho Foundation for the Promotion of Sciences, and the Casio Science Promotion Foundation. Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

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doi = "10.1063/1.4944777",

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T2 - TiN thin film

AU - An, Hongyu

AU - Kanno, Yusuke

AU - Tashiro, Takaharu

AU - Nakamura, Yoshio

AU - Shi, Ji

AU - Ando, Kazuya

N1 - Funding Information: This work was supported by JSPS KAKENHI Grant Nos. 26220604, 26103004, 26600078, PRESTO-JST Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers, the Mitsubishi Foundation, the Asahi Glass Foundation, the Mizuho Foundation for the Promotion of Sciences, and the Casio Science Promotion Foundation. Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/3/21

Y1 - 2016/3/21

N2 - The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni20Fe80 with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.

AB - The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni20Fe80 with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.

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Spin current transport in ceramic: TiN thin film

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