Spin seebeck effect in Ni81Fe19/Pt thin films with different widths

K. Uchida; T. Ota; K. Harii; K. Ando; K. Sasage; H. Nakayama; K. Ikeda; E. Saitoh

doi:10.1109/TMAG.2009.2018582

Spin seebeck effect in Ni₈₁Fe₁₉/Pt thin films with different widths

K. Uchida, T. Ota, K. Harii, K. Ando, K. Sasage, H. Nakayama, K. Ikeda, E. Saitoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The spin Seebeck effect (SSE) has been measured in Ni₈₁Fe ₁₉ thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.

Original language	English
Article number	4957754
Pages (from-to)	2386-2388
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018582
Publication status	Published - 2009 Jun

Keywords

Ferromagnetic materials
Thermoelectricity
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2009.2018582

Cite this

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title = "Spin seebeck effect in Ni81Fe19/Pt thin films with different widths",

abstract = "The spin Seebeck effect (SSE) has been measured in Ni81Fe 19 thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.",

keywords = "Ferromagnetic materials, Thermoelectricity, Thin films",

author = "K. Uchida and T. Ota and K. Harii and K. Ando and K. Sasage and H. Nakayama and K. Ikeda and E. Saitoh",

note = "Funding Information: The authors thank S. Maekawa, S. Takahashi, J. Ieda, and W. Koshibae for valuable discussions. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” (19048028) from MEXT, Japan, a Grant-in-Aid for Encouragement of Young Scientists (A) from MEXT, Japan, the global COE for the “High-Level global cooperation for leading-edge platform on access spaces” from MEXT, Japan.",

year = "2009",

month = jun,

doi = "10.1109/TMAG.2009.2018582",

language = "English",

volume = "45",

pages = "2386--2388",

journal = "IEEE Transactions on Magnetics",

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T1 - Spin seebeck effect in Ni81Fe19/Pt thin films with different widths

AU - Uchida, K.

AU - Ota, T.

AU - Harii, K.

AU - Ando, K.

AU - Sasage, K.

AU - Nakayama, H.

AU - Ikeda, K.

AU - Saitoh, E.

N1 - Funding Information: The authors thank S. Maekawa, S. Takahashi, J. Ieda, and W. Koshibae for valuable discussions. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” (19048028) from MEXT, Japan, a Grant-in-Aid for Encouragement of Young Scientists (A) from MEXT, Japan, the global COE for the “High-Level global cooperation for leading-edge platform on access spaces” from MEXT, Japan.

PY - 2009/6

Y1 - 2009/6

N2 - The spin Seebeck effect (SSE) has been measured in Ni81Fe 19 thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.

AB - The spin Seebeck effect (SSE) has been measured in Ni81Fe 19 thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.

KW - Ferromagnetic materials

KW - Thermoelectricity

KW - Thin films

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