Sputter growth of chalcogenide superlattice films for future phase change memory applications

Yuta Saito; Kirill V. Mitrofanov; Kotaro Makino; Noriyuki Miyata; Paul Fons; Alexander V. Kolobov; Junji Tominaga

doi:10.1149/08603.0049ecst

Sputter growth of chalcogenide superlattice films for future phase change memory applications

Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb₂Te₃ superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.

Original language	English
Title of host publication	ECS Transactions
Editors	S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J.G. Park, G. Bersuker, H. Kubota, C. Hacker, Y.S. Obeng
Publisher	Electrochemical Society Inc.
Pages	49-54
Number of pages	6
Edition	3
ISBN (Electronic)	9781607688471
ISBN (Print)	9781510871632
DOIs	https://doi.org/10.1149/08603.0049ecst
Publication status	Published - 2018
Externally published	Yes
Event	Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sept 30 → 2018 Oct 4

Publication series

Name	ECS Transactions
Number	3
Volume	86
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	18/9/30 → 18/10/4

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08603.0049ecst

Cite this

Saito, Y., Mitrofanov, K. V., Makino, K., Miyata, N., Fons, P., Kolobov, A. V., & Tominaga, J. (2018). Sputter growth of chalcogenide superlattice films for future phase change memory applications. In S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J. G. Park, G. Bersuker, H. Kubota, C. Hacker, & Y. S. Obeng (Eds.), ECS Transactions (3 ed., pp. 49-54). (ECS Transactions; Vol. 86, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/08603.0049ecst

Sputter growth of chalcogenide superlattice films for future phase change memory applications. / Saito, Yuta; Mitrofanov, Kirill V.; Makino, Kotaro et al.
ECS Transactions. ed. / S. Shingubara; Z. Karim; K. Kobayashi; B. Magyari-Kope; H. Shima; Y. Saito; J.G. Park; G. Bersuker; H. Kubota; C. Hacker; Y.S. Obeng. 3. ed. Electrochemical Society Inc., 2018. p. 49-54 (ECS Transactions; Vol. 86, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, Y, Mitrofanov, KV, Makino, K, Miyata, N, Fons, P, Kolobov, AV & Tominaga, J 2018, Sputter growth of chalcogenide superlattice films for future phase change memory applications. in S Shingubara, Z Karim, K Kobayashi, B Magyari-Kope, H Shima, Y Saito, JG Park, G Bersuker, H Kubota, C Hacker & YS Obeng (eds), ECS Transactions. 3 edn, ECS Transactions, no. 3, vol. 86, Electrochemical Society Inc., pp. 49-54, Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08603.0049ecst

Saito Y, Mitrofanov KV, Makino K, Miyata N, Fons P, Kolobov AV et al. Sputter growth of chalcogenide superlattice films for future phase change memory applications. In Shingubara S, Karim Z, Kobayashi K, Magyari-Kope B, Shima H, Saito Y, Park JG, Bersuker G, Kubota H, Hacker C, Obeng YS, editors, ECS Transactions. 3 ed. Electrochemical Society Inc. 2018. p. 49-54. (ECS Transactions; 3). doi: 10.1149/08603.0049ecst

Saito, Yuta ; Mitrofanov, Kirill V. ; Makino, Kotaro et al. / Sputter growth of chalcogenide superlattice films for future phase change memory applications. ECS Transactions. editor / S. Shingubara ; Z. Karim ; K. Kobayashi ; B. Magyari-Kope ; H. Shima ; Y. Saito ; J.G. Park ; G. Bersuker ; H. Kubota ; C. Hacker ; Y.S. Obeng. 3. ed. Electrochemical Society Inc., 2018. pp. 49-54 (ECS Transactions; 3).

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abstract = "Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.",

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AB - Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.

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Sputter growth of chalcogenide superlattice films for future phase change memory applications

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