Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. Fons; S. Niki; A. Yamada; A. Okada; D. J. Tweet

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

P. Fons, S. Niki, A. Yamada, A. Okada, D. J. Tweet

Research output: Contribution to journal › Conference article › peer-review

Abstract

A series of CuInSe₂ thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe₂ thin film in-plane lattice constant for CuInSe₂ films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe₂ layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Original language	English
Pages (from-to)	549-554
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	399
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 1995 Nov 27 → 1995 Dec 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates",

abstract = "A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.",

author = "P. Fons and S. Niki and A. Yamada and A. Okada and Tweet, {D. J.}",

year = "1996",

month = jan,

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language = "English",

volume = "399",

pages = "549--554",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 27-11-1995 Through 01-12-1995",

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TY - JOUR

T1 - Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

AU - Fons, P.

AU - Niki, S.

AU - Yamada, A.

AU - Okada, A.

AU - Tweet, D. J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

AB - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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M3 - Conference article

AN - SCOPUS:0029723269

SN - 0272-9172

VL - 399

SP - 549

EP - 554

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

Abstract

ASJC Scopus subject areas

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