Stress engineering in (100) and (110) nMOSFETs

Ken Uchida, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The physical mechanisms of electron mobility (μ e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (ΔE C) and effective mass change (Δm*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (100) nMOSFETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔE C and Δm*, experimental μ e enhancement is accurately modeled for biaxial, uniaxial >100<, and uniaxial <110> stress for (100) and (110) nMOSFETs. The limits of μ e enhancement are also discussed.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages109-112
Number of pages4
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/TerritoryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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