Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh; Shigeki Kobayashi; Ken Uchida

doi:10.1109/TED.2009.2021345

Stress engineering in high-κ FETs for mobility and on-current enhancements

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO₂ FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO₂ nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO₂ nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

Original language	English
Pages (from-to)	1451-1457
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	7
DOIs	https://doi.org/10.1109/TED.2009.2021345
Publication status	Published - 2009
Externally published	Yes

Keywords

Biaxial stress
HfSiON
High-κ
Mobility
Remote Coulomb scattering (RCS)
Short channel
Strain
Stress
Uniaxial stress
Velocity
Velocity saturation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2009.2021345

Cite this

@article{094918b5f8e643aeb033c68e2f16b732,

title = "Stress engineering in high-κ FETs for mobility and on-current enhancements",

abstract = "We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.",

keywords = "Biaxial stress, HfSiON, High-κ, Mobility, Remote Coulomb scattering (RCS), Short channel, Strain, Stress, Uniaxial stress, Velocity, Velocity saturation",

author = "Masumi Saitoh and Shigeki Kobayashi and Ken Uchida",

year = "2009",

doi = "10.1109/TED.2009.2021345",

language = "English",

volume = "56",

pages = "1451--1457",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Stress engineering in high-κ FETs for mobility and on-current enhancements

AU - Saitoh, Masumi

AU - Kobayashi, Shigeki

AU - Uchida, Ken

PY - 2009

Y1 - 2009

N2 - We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

AB - We present a systematic study of uniaxial/biaxial stress effects on low-field mobility and on-current in high-κ n/pFETs. It is found that mobility enhancement by strain in high-κ FETs is smaller than SiO2 FETs in low effective field because of remote Coulomb scattering caused by fixed charges inside high-κ films, while mobility enhancement by biaxial tensile strain in high-κ nFETs is greater than SiO2 nFETs in high effective field due to weaker surface roughness scattering in high-κ nFETs. In short-channel high-κ nFETs, better on-current improvement by biaxial tensile strain than in SiO2 nFETs is achieved as a result of both higher mobility enhancement and weaker velocity saturation. The optimum stress design for high-κ n/pFETs is also discussed, and it is concluded that the application of transverse tensile stress, in addition to conventional longitudinal stress, is essential for performance improvement of high-κ n/pFETs.

KW - Biaxial stress

KW - HfSiON

KW - High-κ

KW - Mobility

KW - Remote Coulomb scattering (RCS)

KW - Short channel

KW - Strain

KW - Stress

KW - Uniaxial stress

KW - Velocity

KW - Velocity saturation

UR - http://www.scopus.com/inward/record.url?scp=67650269417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650269417&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2021345

DO - 10.1109/TED.2009.2021345

M3 - Article

AN - SCOPUS:67650269417

SN - 0018-9383

VL - 56

SP - 1451

EP - 1457

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Stress engineering in high-κ FETs for mobility and on-current enhancements

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this