Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

R. A. Castro-Arata; V. M. Stozharov; D. M. Dolginsev; A. A. Kononov; Y. Saito; P. Fons; J. Tominaga; N. I. Anisimova; A. V. Kolobov

doi:10.1134/S106378262002013X

Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

Original language	English
Pages (from-to)	201-204
Number of pages	4
Journal	Semiconductors
Volume	54
Issue number	2
DOIs	https://doi.org/10.1134/S106378262002013X
Publication status	Published - 2020 Feb 1
Externally published	Yes

Keywords

Ge–Sb–Te chalcogenide system
structural and dielectric properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1134/S106378262002013X

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title = "Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering",

abstract = "Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.",

keywords = "Ge–Sb–Te chalcogenide system, structural and dielectric properties",

author = "Castro-Arata, {R. A.} and Stozharov, {V. M.} and Dolginsev, {D. M.} and Kononov, {A. A.} and Y. Saito and P. Fons and J. Tominaga and Anisimova, {N. I.} and Kolobov, {A. V.}",

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year = "2020",

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day = "1",

doi = "10.1134/S106378262002013X",

language = "English",

volume = "54",

pages = "201--204",

journal = "Semiconductors",

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publisher = "Maik Nauka-Interperiodica Publishing",

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TY - JOUR

T1 - Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

AU - Castro-Arata, R. A.

AU - Stozharov, V. M.

AU - Dolginsev, D. M.

AU - Kononov, A. A.

AU - Saito, Y.

AU - Fons, P.

AU - Tominaga, J.

AU - Anisimova, N. I.

AU - Kolobov, A. V.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

AB - Abstract: The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

KW - Ge–Sb–Te chalcogenide system

KW - structural and dielectric properties

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U2 - 10.1134/S106378262002013X

DO - 10.1134/S106378262002013X

M3 - Article

AN - SCOPUS:85081548410

SN - 1063-7826

VL - 54

SP - 201

EP - 204

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

Abstract

Keywords

ASJC Scopus subject areas

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