Study of energy band parameters in p‐type Ge0.9Si0.1 alloys

K. Takeda; Y. Maeda; E. Ohta; M. Sakata; G. Kido; N. Miura

doi:10.1002/pssb.2221150206

Study of energy band parameters in p‐type Ge_0.9Si_0.1 alloys

K. Takeda, Y. Maeda, E. Ohta, M. Sakata, G. Kido, N. Miura

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The electronic properties of Ge_0.9Si_0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

Original language	English
Pages (from-to)	369-379
Number of pages	11
Journal	physica status solidi (b)
Volume	115
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221150206
Publication status	Published - 1983 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.",

author = "K. Takeda and Y. Maeda and E. Ohta and M. Sakata and G. Kido and N. Miura",

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T1 - Study of energy band parameters in p‐type Ge0.9Si0.1 alloys

AU - Takeda, K.

AU - Maeda, Y.

AU - Ohta, E.

AU - Sakata, M.

AU - Kido, G.

AU - Miura, N.

PY - 1983/2/1

Y1 - 1983/2/1

N2 - The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

AB - The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

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U2 - 10.1002/pssb.2221150206

DO - 10.1002/pssb.2221150206

M3 - Article

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JO - physica status solidi (b)

JF - physica status solidi (b)

IS - 2

ER -

Study of energy band parameters in p‐type Ge_0.9Si_0.1 alloys

Abstract

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