@inproceedings{bc0c1dafee534ab6adfb7931bb25cf06,
title = "Successful measurements of electron energy dependence of interface-trap-induced scattering in N-MOSFETs - Developed hall effect measurements and comparison with theory",
abstract = "The dependence of the interface-trap-induced scattering on the electron kinetic energy (εele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate εele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as εele increases, the interface-trap-induced scattering is suppressed more greatly than calculated by the conventional two-dimensional Coulomb scattering model. It is also found that the εele dependence of the interface-trap-induced scattering is enhanced as D it increases.",
keywords = "Electron energy, Hall effect measurement, Hall factor, Interface states, Scattering",
author = "Shigeki Kobayashi and Takamitsu Ishihara and Masumi Saitoh and Yukio Nakabayashi and Toshinori Numata and Ken Uchida",
year = "2009",
doi = "10.1109/IRPS.2009.5173217",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "8--12",
booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",
note = "2009 IEEE International Reliability Physics Symposium, IRPS 2009 ; Conference date: 26-04-2009 Through 30-04-2009",
}