TY - JOUR
T1 - Surface and bulk-passivated large area multicrystalline silicon solar cells
AU - Fukui, K.
AU - Okada, K.
AU - Inomata, Y.
AU - Takahashi, H.
AU - Fujii, S.
AU - Fukawa, Y.
AU - Shirasawa, K.
N1 - Funding Information:
This work is supported by the New Energy and Industrial Technology Development Organization as part of the New Sunshine Program under the Ministry of International Trade and Industry of Japan.
PY - 1997/11
Y1 - 1997/11
N2 - We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.
AB - We have investigated the surface and bulk passivation technique on large-area multicrystalline silicon solar cells, a large open-circuit voltage has been obtained for cells oxidized to passivate the surface and hydrogen annealed after deposition of silicon nitride film on both surfaces by plasma CVD method (P-SiN) to passivate the bulk. The texture surface like pyramid structure on multicrystalline silicon surface has been obtained uniformly using reactive ion etching (RIE) method. Combining these RIE method and passivation schemes, the conversion efficiency of 17.1% is obtained on 15 cm × 15 cm multicrystalline silicon solar cell. Phosphorus diffusion, BSF formation, passivation technique and contact metallization for low-cost process sequences are also described in this paper.
KW - Multicrystalline silicon
KW - Solar cells
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U2 - 10.1016/S0927-0248(97)00104-9
DO - 10.1016/S0927-0248(97)00104-9
M3 - Article
AN - SCOPUS:0031275549
SN - 0927-0248
VL - 48
SP - 219
EP - 228
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 1-4
ER -
