Surface and subsurface damages in nanoindentation tests of compound semiconductor InP

Engineering & Materials Science

• Indium phosphide 90%
• Nanoindentation 66%
• Single crystals 63%
• Diffraction 59%
• Indentation 58%
• Phase transitions 56%
• Transmission electron microscopy 56%
• Semiconductor materials 48%
• Stress concentration 47%
• Scanning electron microscopy 43%
• Cracks 37%
• Finite element method 33%
• Geometry 33%

Chemical Compounds

• Slip Band 100%
• Indium Phosphide 85%
• Surface Damage 82%
• Semiconductor 41%
• Single Crystalline Solid 39%
• Transmission Electron Microscopy 36%
• Scanning Electron Microscopy 32%
• Surface 17%