Temperature Dependence of Hall Factor in Low-Compensated n-Type Silicon

The Hall coefficient and Hall mobility have been analyzed in order to determine the temperature dependence of the Hall factor for a series of low-compensated n-type silicon samples doped with phosphorus. Hall mobility and the Hall factor are numerically calculated by employing models which assume two different intervalley phonons, in addition to isotropic or anisotropic intravalley acoustic scattering and ionized-impurity scattering. The temperature dependence of the Hall factor calculated from the models is almost independence of the donor concentration. A model of two intervalley phonons of 740 K (2.5) and 190 K (0.15) characteristic temperatures (relative coupling strengths) presents a good description of the Hall mobility results, and reveals the temperature dependence of the Hall factor, which agrees with the experimental results up to 300 K.