Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Makoto Okano; Shu Man Liu; Toshiyuki Ihara; Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Kenneth West; Oana Malis

doi:10.1063/1.2709521

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Makoto Okano, Shu Man Liu, Toshiyuki Ihara, Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Kenneth West, Oana Malis

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

Original language	English
Article number	091108
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2709521
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2709521

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title = "Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers",

abstract = "The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.",

author = "Makoto Okano and Liu, {Shu Man} and Toshiyuki Ihara and Hirotake Itoh and Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, {Loren N.} and Kenneth West and Oana Malis",

note = "Funding Information: This work was partly supported by a Grant-in-Aid from the Ministry of Education, Culture, Sports, Science, and Technology, Japan.",

year = "2007",

doi = "10.1063/1.2709521",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

AU - Okano, Makoto

AU - Liu, Shu Man

AU - Ihara, Toshiyuki

AU - Itoh, Hirotake

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Kenneth

AU - Malis, Oana

N1 - Funding Information: This work was partly supported by a Grant-in-Aid from the Ministry of Education, Culture, Sports, Science, and Technology, Japan.

PY - 2007

Y1 - 2007

N2 - The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

AB - The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAsAlGaAs quantum-wire (T-wire) lasers with perpendicular p - and n -doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.

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DO - 10.1063/1.2709521

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JO - Applied Physics Letters

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ER -

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p - and n -doping layers

Abstract

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