Temporal velocity distribution of positive and negative ions incident on a wafer in a pulsed two-frequency capacitively coupled plasma in CF ₄/Ar for SiO₂ etching

Physics & Astronomy

• positive ions 100%
• negative ions 95%
• velocity distribution 71%
• etching 69%
• wafers 69%
• charging 42%
• damage 32%
• low frequencies 32%
• very high frequencies 29%
• sustaining 27%
• impact velocity 27%
• plasma etching 26%
• plasma density 22%
• integrated circuits 21%
• continuous radiation 21%
• energy distribution 20%
• angular distribution 19%
• pulses 11%
• electrons 9%
• energy 6%