TY - JOUR
T1 - Terahertz generation measurements of multilayered GeTe–Sb 2 Te 3 phase change materials
AU - Makino, Kotaro
AU - Kato, Kosaku
AU - Saito, Yuta
AU - Fons, Paul
AU - Kolobov, Alexander V.
AU - Tominaga, Junji
AU - Nakano, Takashi
AU - Nakajima, Makoto
N1 - Funding Information:
Core Research for Evolutional Science and Technology (CREST) (JPMJCR14F1); Japan Society for the Promotion of Science (JSPS) (JP16H03886, JP18H04515, JP18K14156).
Publisher Copyright:
© 2019 Optical Society of America.
PY - 2019
Y1 - 2019
N2 - Multilayered structures of GeTe and Sb 2 Te 3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb 2 Te 3 and Bi 2 Te 3 , the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials.
AB - Multilayered structures of GeTe and Sb 2 Te 3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb 2 Te 3 and Bi 2 Te 3 , the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials.
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U2 - 10.1364/OL.44.001355
DO - 10.1364/OL.44.001355
M3 - Article
C2 - 30874649
AN - SCOPUS:85063007551
SN - 0146-9592
VL - 44
SP - 1355
EP - 1358
JO - Optics Letters
JF - Optics Letters
IS - 6
ER -