Terahertz profilometer by time-domain polarimetry

Naoya Yasumatsu; Shinichi Watanabe

Terahertz profilometer by time-domain polarimetry

Naoya Yasumatsu, Shinichi Watanabe

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We experimentally show that continuously changing polarity of an elliptically-polarized terahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ∼1 μm.

Original language	English
Title of host publication	2012 Conference on Lasers and Electro-Optics, CLEO 2012
Publication status	Published - 2012 Dec 6
Event	2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States Duration: 2012 May 6 → 2012 May 11

Publication series

Name	2012 Conference on Lasers and Electro-Optics, CLEO 2012

Other

Other	2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/Territory	United States
City	San Jose, CA
Period	12/5/6 → 12/5/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{a84d237227ac47458f809646fb0ef0f3,

title = "Terahertz profilometer by time-domain polarimetry",

abstract = "We experimentally show that continuously changing polarity of an elliptically-polarized terahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ∼1 μm.",

author = "Naoya Yasumatsu and Shinichi Watanabe",

year = "2012",

month = dec,

day = "6",

language = "English",

isbn = "9781467318396",

series = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

TY - GEN

T1 - Terahertz profilometer by time-domain polarimetry

AU - Yasumatsu, Naoya

AU - Watanabe, Shinichi

PY - 2012/12/6

Y1 - 2012/12/6

N2 - We experimentally show that continuously changing polarity of an elliptically-polarized terahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ∼1 μm.

AB - We experimentally show that continuously changing polarity of an elliptically-polarized terahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ∼1 μm.

UR - http://www.scopus.com/inward/record.url?scp=84870349535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870349535&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870349535

SN - 9781467318396

T3 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

BT - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

T2 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

Terahertz profilometer by time-domain polarimetry

Abstract

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ASJC Scopus subject areas

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