The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

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19 Citations (Scopus)


The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

Original languageEnglish
Pages (from-to)L1492-L1494
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 B
Publication statusPublished - 2003 Dec 15


  • Gate Insulator
  • Self-diffusion
  • Silicon dioxide
  • Silicon electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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