The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2

Shigeto Fukatsu; Tomonori Takahashi; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi

doi:10.1143/jjap.42.l1492

The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO₂

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

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Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The self-diffusion coefficient of Si in thermal oxides (SiO₂) formed on semiconductor silicon wafers has been determined with isotope heterostructures, ^natSiO₂/²⁸SiO₂, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The ^natSiO₂ layers contain 3.1% of ³⁰Si stable isotopes while the ²⁸SiO₂ layers are depleted of ³⁰Si stable isotopes down to 0.003%, and the diffusion depth profiles of ³⁰Si isotopes from the ^natSiO₂ to ²⁸SiO₂ layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

Original language	English
Pages (from-to)	L1492-L1494
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.42.l1492
Publication status	Published - 2003 Dec 15

Keywords

Gate Insulator
Self-diffusion
Silicon dioxide
Silicon electronics

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.l1492

Cite this

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title = "The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2",

abstract = "The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.",

keywords = "Gate Insulator, Self-diffusion, Silicon dioxide, Silicon electronics",

author = "Shigeto Fukatsu and Tomonori Takahashi and Itoh, {Kohei M.} and Masashi Uematsu and Akira Fujiwara and Hiroyuki Kageshima and Yasuo Takahashi and Kenji Shiraishi",

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T1 - The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2

AU - Fukatsu, Shigeto

AU - Takahashi, Tomonori

AU - Itoh, Kohei M.

AU - Uematsu, Masashi

AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

AB - The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

KW - Gate Insulator

KW - Self-diffusion

KW - Silicon dioxide

KW - Silicon electronics

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