The effect of side traps on ballistic transistor in Kondo regime

Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

doi:10.1143/JJAP.46.2073

The effect of side traps on ballistic transistor in Kondo regime

Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of side traps on current and conductance in ballistic transport is calculated using slave-boson mean field theory, particularly when there are electrodes on both sides of a short channel. The depth of the conductance dip, which is due to destructive interference known as the Fano-Kondo effect, depends on the tunneling coupling between the conducting region and the electrodes. The results imply that ballistic devices are sensitive to trap sites.

Original language	English
Pages (from-to)	2073-2075
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2073
Publication status	Published - 2007 Apr 24
Externally published	Yes

Keywords

Ballistic transistor
Fano-Kondo effect
Trap

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.2073

Cite this

@article{fb6e0a6e80a74e108d9882a77e954b69,

title = "The effect of side traps on ballistic transistor in Kondo regime",

abstract = "The effect of side traps on current and conductance in ballistic transport is calculated using slave-boson mean field theory, particularly when there are electrodes on both sides of a short channel. The depth of the conductance dip, which is due to destructive interference known as the Fano-Kondo effect, depends on the tunneling coupling between the conducting region and the electrodes. The results imply that ballistic devices are sensitive to trap sites.",

keywords = "Ballistic transistor, Fano-Kondo effect, Trap",

author = "Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2073",

language = "English",

volume = "46",

pages = "2073--2075",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - The effect of side traps on ballistic transistor in Kondo regime

AU - Tanamoto, Tetsufumi

AU - Uchida, Ken

AU - Fujita, Shinobu

PY - 2007/4/24

Y1 - 2007/4/24

N2 - The effect of side traps on current and conductance in ballistic transport is calculated using slave-boson mean field theory, particularly when there are electrodes on both sides of a short channel. The depth of the conductance dip, which is due to destructive interference known as the Fano-Kondo effect, depends on the tunneling coupling between the conducting region and the electrodes. The results imply that ballistic devices are sensitive to trap sites.

AB - The effect of side traps on current and conductance in ballistic transport is calculated using slave-boson mean field theory, particularly when there are electrodes on both sides of a short channel. The depth of the conductance dip, which is due to destructive interference known as the Fano-Kondo effect, depends on the tunneling coupling between the conducting region and the electrodes. The results imply that ballistic devices are sensitive to trap sites.

KW - Ballistic transistor

KW - Fano-Kondo effect

KW - Trap

UR - http://www.scopus.com/inward/record.url?scp=34547891576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547891576&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.2073

DO - 10.1143/JJAP.46.2073

M3 - Article

AN - SCOPUS:34547891576

SN - 0021-4922

VL - 46

SP - 2073

EP - 2075

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

The effect of side traps on ballistic transistor in Kondo regime

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this