The effect of the nitrogen plasma irradiation on ZnO single crystals

H. Maki; N. Ichinose; I. Sakaguchi; N. Ohashi; H. Haneda; J. Tanaka

The effect of the nitrogen plasma irradiation on ZnO single crystals

H. Maki, N. Ichinose, I. Sakaguchi, N. Ohashi, H. Haneda, J. Tanaka

Research output: Contribution to journal › Conference article › peer-review

Abstract

The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N₂, the N species that has excess electrons like NH₃ or N₂, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Key Engineering Materials
Volume	216
Publication status	Published - 2001
Externally published	Yes
Event	20th Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan Duration: 2000 Oct 26 → 2000 Oct 27

Keywords

Doping
Electron cyclotron resonance
Nitrogen
X-ray photoelectron spectroscopy
Zinc oxide

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "The effect of the nitrogen plasma irradiation on ZnO single crystals",

abstract = "The ZnO (0001) and (000{\=1}) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.",

keywords = "Doping, Electron cyclotron resonance, Nitrogen, X-ray photoelectron spectroscopy, Zinc oxide",

author = "H. Maki and N. Ichinose and I. Sakaguchi and N. Ohashi and H. Haneda and J. Tanaka",

year = "2001",

language = "English",

volume = "216",

pages = "61--64",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications Ltd",

note = "20th Electronics Division Meeting of the Ceramic Society of Japan ; Conference date: 26-10-2000 Through 27-10-2000",

}

TY - JOUR

T1 - The effect of the nitrogen plasma irradiation on ZnO single crystals

AU - Maki, H.

AU - Ichinose, N.

AU - Sakaguchi, I.

AU - Ohashi, N.

AU - Haneda, H.

AU - Tanaka, J.

PY - 2001

Y1 - 2001

N2 - The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.

AB - The ZnO (0001) and (0001̄) surfaces irradiated with nitrogen using an electron cyclotron resonance (ECR) gun were studied with X-ray photoelectron spectroscopy (XPS). After annealed at 800°C, N ions remained on the surfaces in four states: i.e. NO, N2, the N species that has excess electrons like NH3 or N2, and the N ions that replaced O ions in ZnO lattice. The surface oxygen could be substituted with N ions that could affect N-doping and the heterogeneous growth of nitride thin films on ZnO.

KW - Doping

KW - Electron cyclotron resonance

KW - Nitrogen

KW - X-ray photoelectron spectroscopy

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=0034772871&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034772871&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034772871

SN - 1013-9826

VL - 216

SP - 61

EP - 64

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - 20th Electronics Division Meeting of the Ceramic Society of Japan

Y2 - 26 October 2000 through 27 October 2000

ER -

The effect of the nitrogen plasma irradiation on ZnO single crystals

Abstract

Keywords

ASJC Scopus subject areas

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