The effects of thermal treatments on the electrical properties of phosphorus doped ZnO layers grown by MBE

H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu, S. Niki

Research output: Contribution to journalConference articlepeer-review

34 Citations (Scopus)


Phosphorus-doped ZnO films were grown by radical source molecular beam epitaxy (RS-MBE). Zn3P2 was used for the phosphorus source. ZnO:P layers were grown on an in situ annealed low temperature buffer layers, and the phosphorus concentration was changed by altering the temperature of the Zn3P2 K-cell. The phosphorus concentration could be controlled from 1×1018 to 2×1020 cm -3 without phase separation. The importance of the ambient gas used during thermal treatments was demonstrated. All of the ZnO:P layers showed n-type conduction, however, the electron concentration of ZnO:P was found to decrease by as much as from 4.1×1019 to 9.7×10 16 cm-3 when the samples underwent oxygen ambient rapid thermal annealing (RTA) treatment. Furthermore, a new photoluminescence peak at 3.357 eV was observed after RTA treatment, which was not present in undoped ZnO layers before and after RTA treatment. These results indicate that the activation of acceptors in ZnO:P occurred in samples that underwent RTA treatment and that phosphorus is a good candidate as an acceptor dopant.

Original languageEnglish
Pages (from-to)268-272
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2005 May 1
Externally publishedYes
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 2004 Aug 222004 Aug 27


  • A1. Phosphorus doping
  • A1. Thermal treatment
  • A3. Molecular beam epitaxy
  • B1. ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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