The piezoresistive mobility modeling for cubic and hexagonal silicon carbide crystals

The piezoresistive effect is characterized by the change in the resistivity of a material relative to mechanical forces exerted on it. Such materials can be used as pressure sensors and are among the most important components for micro-electro mechanical system applications. To date, most research on the piezoresistive effect has been directed toward cubic crystalline materials such as Si; however, the prospective non-cubic materials, such as SiC, are known to have exciting and promising properties. SiC exhibits high-temperature robustness and is chemically stable. It is expected that these properties can be applied to a variety of applications. These materials fall in the category of hexagonal crystalline systems, and it is difficult to evaluate the piezoresistive properties of such materials. In this study, we discuss the piezoresistive mobility model that corresponds to both the cubic and the hexagonal crystalline systems. This mobility model is derived from the empirical fitting of the Gauge Factor (G F) values using the longitudinal and the transverse piezoresistive coefficients and the material-unique fitting parameters. Our proposed method has been implemented in the original device simulator and has been evaluated with respect to both Si and SiC materials. This report shows the well-matched G F values and suggests that the proposed piezoresistive effect model can be implemented in device simulation modeling.