Abstract
For an electron-beam-excited KrF laser, we analyzed theoretically the dependence of the performance characteristics on the excitation rate and initial F2 concentration. According to the analysis of KrF* formation processes, KrF* relaxation processes, 248 nm absorption processes, and their individual efficiencies, a novel optimization method for initial F2 concentrations is necessary instead of a conventional method of a “constant” F2 burn-up rate. Then, we determined optimum F2 concentration as a function of the excitation rate for excitation pulses of 20–500 ns FWHM. Finally, we obtained the scaling law for the intrinsic KrF laser efficiency.
Original language | English |
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Pages (from-to) | 232-242 |
Number of pages | 11 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 19 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1983 Feb |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering