Abstract
The thermal conductivity of low-dielectric-constant (low-k) materials has been studied by a nano second thermoreflectance measurement system (Nano-TheMS). The Nano-TheMS, which utilizes thermoreflectance, can easily measure the thermal conductivity of thin film of nano-meter scale thickness. We have measured a series of low-k film samples with varying methyl group content. The methyl group content is a significant factor in determining the dielectric constant and mechanical strength of low-k materials. We have also measured the temperature dependence of the thermal conductivity from room temperature to 300 °C as this dependence is essential to simulate realistic temperature distributions inside integrated devices. It was found that its dependence is not remarkable but the thermal conductivity gradually increase with rising temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 796-799 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 85 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 2008 May 1 |
| Externally published | Yes |
Keywords
- Low-k
- Methyl group
- Porous silica
- Temperature dependence
- Thermal conductivity
- Thermoreflectance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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