TY - JOUR
T1 - Thermal conductivity of Si nanowires with δ-modulated dopant distribution by self-heated 3ω method and its length dependence
AU - Zhuge, Fuwei
AU - Takahashi, Tsunaki
AU - Kanai, Masaki
AU - Nagashima, Kazuki
AU - Fukata, Naoki
AU - Uchida, Ken
AU - Yanagida, Takeshi
N1 - Funding Information:
This work was supported by KAKENHI (Grant Nos. 17H04927, 18H01831, and 18H05243). Y.T. was supported by ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Government of Japan). T.T., K.N., K.U., and T.Y. were supported by JST CREST, Japan (Grant No. JPMJCR1331). This work was performed under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices” and the MEXT Project of “Integrated Research Consortium on Chemical Sciences”.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/8/14
Y1 - 2018/8/14
N2 - Here, we report the thermal conductivity measurement of B-doped Si nanowires with δ dopant modulation on the surface using the self-heated 3ω method, which resembles the thermal dissipation in operating electronic devices. The thermal conductivity for δ-modulated Si nanowires of 45 nm diameter (∼23 W/m K) is found to agree well with that of non-doped Si nanowires reported previously, which is attributed to the dominant surface boundary scattering and the highly confined dopant distribution at the surface. Furthermore, through a length dependent study of the thermal conductivity (κ) from 400 nm to 4 μm, we found an apparent length dependence of κ at L < 2 μm. The phenomenon could not be simply interpreted by solely considering the ballistic effect in thermal transport, but can be accounted for by including the additional resistive processes that are associated with the thermalization of joule-heating emitted phonons, which opts in to suppress the thermal conductivity of nano-systems under the ballistic thermal transport regime.
AB - Here, we report the thermal conductivity measurement of B-doped Si nanowires with δ dopant modulation on the surface using the self-heated 3ω method, which resembles the thermal dissipation in operating electronic devices. The thermal conductivity for δ-modulated Si nanowires of 45 nm diameter (∼23 W/m K) is found to agree well with that of non-doped Si nanowires reported previously, which is attributed to the dominant surface boundary scattering and the highly confined dopant distribution at the surface. Furthermore, through a length dependent study of the thermal conductivity (κ) from 400 nm to 4 μm, we found an apparent length dependence of κ at L < 2 μm. The phenomenon could not be simply interpreted by solely considering the ballistic effect in thermal transport, but can be accounted for by including the additional resistive processes that are associated with the thermalization of joule-heating emitted phonons, which opts in to suppress the thermal conductivity of nano-systems under the ballistic thermal transport regime.
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U2 - 10.1063/1.5039988
DO - 10.1063/1.5039988
M3 - Article
AN - SCOPUS:85051700316
SN - 0021-8979
VL - 124
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 6
M1 - 065105
ER -