Three dimensional vector accelerometer using SOI structure for high temperature

Hidekuni Takao; Yoshinori Matsumoto; Hee Don Seo; Hidekazu Tanaka

Three dimensional vector accelerometer using SOI structure for high temperature

Hidekuni Takao, Yoshinori Matsumoto, Hee Don Seo, Hidekazu Tanaka

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.

Original language	English
Pages	683-686
Number of pages	4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden Duration: 1995 Jun 25 → 1995 Jun 29

Other

Other	Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
City	Stockholm, Sweden
Period	95/6/25 → 95/6/29

ASJC Scopus subject areas

General Engineering

Cite this

Three dimensional vector accelerometer using SOI structure for high temperature. / Takao, Hidekuni; Matsumoto, Yoshinori; Seo, Hee Don et al.
1995. 683-686 Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden.

Research output: Contribution to conference › Paper › peer-review

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author = "Hidekuni Takao and Yoshinori Matsumoto and Seo, {Hee Don} and Hidekazu Tanaka",

year = "1995",

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Y1 - 1995

N2 - In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.

AB - In this paper, a novel piezoresistive silicon accelerometer using SOI structure is described. The accelerometer is formed to have endurance for high temperature by perfect isolation of the piezoresistors. The accelerometer has surrounding mass structure to detect the three dimensional (3-D) acceleration with a new method using analog operating circuits. The sensor sizes were optimized with FEM simulation. The accelerometer was fabricated by bulk micro-machining technology. Both the temperature characteristics and the output characteristics were measured, and the characteristics of the fabricated chip were compared with the simulated results.

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ER -

Three dimensional vector accelerometer using SOI structure for high temperature

Abstract

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ASJC Scopus subject areas

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