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Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs
Kensuke Ota, Masumi Saitoh, Yukio Nakabayashi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
5
Citations
(Scopus)