TY - JOUR
T1 - Time-resolved measurement of charging on hole bottoms of SiO2 wafer exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma
AU - Ohmori, Takeshi
AU - Kamata Goto, Takeshi
AU - Kitajima, Takeshi
AU - Makabe, Toshiaki
PY - 2005/8/26
Y1 - 2005/8/26
N2 - We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO 2 hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.
AB - We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO 2 hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.
KW - Charging free process
KW - Charging in dielectric etching
KW - Emission CT
KW - Negative charge injection
KW - Pulsed 2f-CCP
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U2 - 10.1143/JJAP.44.L1105
DO - 10.1143/JJAP.44.L1105
M3 - Article
AN - SCOPUS:32044467151
SN - 0021-4922
VL - 44
SP - L1105-L1108
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 33-36
ER -