Abstract
Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. The interface between a pulsed plasma and a microstructure on a wafer is investigated by phase space modeling, with a focus on the charging free process.
| Original language | English |
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| Pages | 156-159 |
| Number of pages | 4 |
| Publication status | Published - 1998 Dec 1 |
| Event | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA Duration: 1998 Jun 4 → 1998 Jun 5 |
Other
| Other | Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID |
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| City | Honolulu, HI, USA |
| Period | 98/6/4 → 98/6/5 |
ASJC Scopus subject areas
- Engineering(all)