Transport of deposited atoms throughout strain-mediated self-assembly

Oussama Moutanabbir, Satoru Miyamoto, Eugene E. Haller, Kohei M. Itoh

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here Ge76 was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of Ge70. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking of the origin of Ge atoms and their flow towards the growing islands. This atomic transport was quantified based on the quasiharmonic approximation of Ge-Ge vibrations and described using a rate equation model.

Original languageEnglish
Article number026101
JournalPhysical review letters
Issue number2
Publication statusPublished - 2010 Jul 6

ASJC Scopus subject areas

  • General Physics and Astronomy


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