Two dimensional photonic crystal nanocavities with InAs/GaAs quantum dot active regions embedded by MBE regrowth

We demonstrate two dimensional photonic crystal nanocavities embedding spatially-isolated active regions containing InAs/GaAs self-assembled quantum dots. We fabricated the GaAs-based structures by a combination of electron-beam lithography, dry/wet etching and crystal regrowth using molecular beam epitaxy. The fabricated nanocavity based on a photonic crystal double heterostructure supports a cavity mode with a high experimental quality factor over 10,000, despite the existence of a mound structure on the nanocavity formed during the regrowth. Using electromagnetic simulations, we discuss the origin of the cavity mode and a direction for further increasing the quality factor. The two dimensional photonic crystal nanocavities with buried quantum dot active regions will provide a useful platform for developing high performance nanolasers.