Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

K. Matsuda; S. V. Nair; H. E. Ruda; Y. Sugimoto; T. Saiki; K. Yamaguchi

doi:10.1063/1.2425039

Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki, K. Yamaguchi

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

Original language	English
Article number	013101
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2425039
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy",

abstract = "The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.",

author = "K. Matsuda and Nair, {S. V.} and Ruda, {H. E.} and Y. Sugimoto and T. Saiki and K. Yamaguchi",

note = "Funding Information: The authors thank Y. Kanemitsu for insightful discussions. Two of the authors (S.V.N. and H.E.R.) acknowledge support from NSERC and AFOSR. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2425039",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

AU - Matsuda, K.

AU - Nair, S. V.

AU - Ruda, H. E.

AU - Sugimoto, Y.

AU - Saiki, T.

AU - Yamaguchi, K.

N1 - Funding Information: The authors thank Y. Kanemitsu for insightful discussions. Two of the authors (S.V.N. and H.E.R.) acknowledge support from NSERC and AFOSR. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

AB - The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

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Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

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