Ultra high dose boron ion implantation: Super-saturation of boron and its application

Ichiro Mizushima, Atsushi Murakoshi, Kyoichi Suguro, Nobutoshi Aoki, Jun Yamauchi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 1021 cm-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 1017 cm-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B12) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10-8 Ω cm2 was demonstrated by this high dose boron implantation technique with co-implantation of germanium.

Original languageEnglish
Pages (from-to)54-59
Number of pages6
JournalMaterials Chemistry and Physics
Issue number1-3
Publication statusPublished - 1998 Jul
Externally publishedYes


  • Boron
  • Contact
  • First-principles calculation
  • Ion implantation
  • Super-saturation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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