Ultra high dose boron ion implantation: Super-saturation of boron and its application

Ichiro Mizushima; Atsushi Murakoshi; Kyoichi Suguro; Nobutoshi Aoki; Jun Yamauchi

doi:10.1016/S0254-0584(98)00107-2

Ultra high dose boron ion implantation: Super-saturation of boron and its application

Ichiro Mizushima, Atsushi Murakoshi, Kyoichi Suguro, Nobutoshi Aoki, Jun Yamauchi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 10²¹ cm^-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 10¹⁷ cm^-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B₁₂) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10^-8 Ω cm² was demonstrated by this high dose boron implantation technique with co-implantation of germanium.

Original language	English
Pages (from-to)	54-59
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	54
Issue number	1-3
DOIs	https://doi.org/10.1016/S0254-0584(98)00107-2
Publication status	Published - 1998 Jul
Externally published	Yes

Keywords

Boron
Contact
First-principles calculation
Ion implantation
Super-saturation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/S0254-0584(98)00107-2

Cite this

@article{6e6de58168e243deaeea3d2d4dbcbd1e,

title = "Ultra high dose boron ion implantation: Super-saturation of boron and its application",

abstract = "Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 1021 cm-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 1017 cm-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B12) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10-8 Ω cm2 was demonstrated by this high dose boron implantation technique with co-implantation of germanium.",

keywords = "Boron, Contact, First-principles calculation, Ion implantation, Super-saturation",

author = "Ichiro Mizushima and Atsushi Murakoshi and Kyoichi Suguro and Nobutoshi Aoki and Jun Yamauchi",

year = "1998",

month = jul,

doi = "10.1016/S0254-0584(98)00107-2",

language = "English",

volume = "54",

pages = "54--59",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Ultra high dose boron ion implantation

T2 - Super-saturation of boron and its application

AU - Mizushima, Ichiro

AU - Murakoshi, Atsushi

AU - Suguro, Kyoichi

AU - Aoki, Nobutoshi

AU - Yamauchi, Jun

PY - 1998/7

Y1 - 1998/7

N2 - Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 1021 cm-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 1017 cm-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B12) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10-8 Ω cm2 was demonstrated by this high dose boron implantation technique with co-implantation of germanium.

AB - Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 1021 cm-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 1017 cm-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B12) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10-8 Ω cm2 was demonstrated by this high dose boron implantation technique with co-implantation of germanium.

KW - Boron

KW - Contact

KW - First-principles calculation

KW - Ion implantation

KW - Super-saturation

UR - http://www.scopus.com/inward/record.url?scp=0032118062&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032118062&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(98)00107-2

DO - 10.1016/S0254-0584(98)00107-2

M3 - Article

AN - SCOPUS:0032118062

SN - 0254-0584

VL - 54

SP - 54

EP - 59

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1-3

ER -

Ultra high dose boron ion implantation: Super-saturation of boron and its application

Abstract

Keywords

ASJC Scopus subject areas

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