Ultra-small, self-holding, optical gate switch using Ge2Sb 2Te5 with a multi-mode Si waveguide

Daiki Tanaka; Yuya Shoji; Masashi Kuwahara; Xiaomin Wang; Kenji Kintaka; Hitoshi Kawashima; Tatsuya Toyosaki; Yuichiro Ikuma; Hiroyuki Tsuda

doi:10.1364/OE.20.010283

Ultra-small, self-holding, optical gate switch using Ge₂Sb ₂Te₅ with a multi-mode Si waveguide

Daiki Tanaka, Yuya Shoji, Masashi Kuwahara, Xiaomin Wang, Kenji Kintaka, Hitoshi Kawashima, Tatsuya Toyosaki, Yuichiro Ikuma, Hiroyuki Tsuda

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

We report a multi-mode interference-based optical gate switch using a Ge₂Sb₂Te₅ thin film with a diameter of only 1 μm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, selfholding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.

Original language	English
Pages (from-to)	10283-10294
Number of pages	12
Journal	Optics Express
Volume	20
Issue number	9
DOIs	https://doi.org/10.1364/OE.20.010283
Publication status	Published - 2012 Apr 23

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We report a multi-mode interference-based optical gate switch using a Ge2Sb2Te5 thin film with a diameter of only 1 μm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, selfholding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.",

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AU - Kintaka, Kenji

AU - Kawashima, Hitoshi

AU - Toyosaki, Tatsuya

AU - Ikuma, Yuichiro

AU - Tsuda, Hiroyuki

PY - 2012/4/23

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AB - We report a multi-mode interference-based optical gate switch using a Ge2Sb2Te5 thin film with a diameter of only 1 μm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, selfholding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.

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Ultra-small, self-holding, optical gate switch using Ge₂Sb ₂Te₅ with a multi-mode Si waveguide

Abstract

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