Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi; Takasumi Tanabe; Hideaki Taniyama; Kohei Kawasaki; Masaya Notomi

doi:10.1364/cleo.2010.cwb2

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, Masaya Notomi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528896
DOIs	https://doi.org/10.1364/cleo.2010.cwb2
Publication status	Published - 2010
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: 2010 May 16 → 2010 May 21

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country/Territory	United States
City	San Jose, CA
Period	10/5/16 → 10/5/21

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo.2010.cwb2

Cite this

Kuramochi, E, Tanabe, T, Taniyama, H, Kawasaki, K & Notomi, M 2010, Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. in Conference on Lasers and Electro-Optics, CLEO 2010. Optics InfoBase Conference Papers, Optical Society of America (OSA), Conference on Lasers and Electro-Optics, CLEO 2010, San Jose, CA, United States, 10/5/16. https://doi.org/10.1364/cleo.2010.cwb2

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title = "Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity",

abstract = "We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.",

author = "Eiichi Kuramochi and Takasumi Tanabe and Hideaki Taniyama and Kohei Kawasaki and Masaya Notomi",

year = "2010",

doi = "10.1364/cleo.2010.cwb2",

language = "English",

isbn = "9781557528896",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

TY - GEN

T1 - Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

AU - Kuramochi, Eiichi

AU - Tanabe, Takasumi

AU - Taniyama, Hideaki

AU - Kawasaki, Kohei

AU - Notomi, Masaya

PY - 2010

Y1 - 2010

N2 - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

AB - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

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UR - http://www.scopus.com/inward/citedby.url?scp=85086494102&partnerID=8YFLogxK

U2 - 10.1364/cleo.2010.cwb2

DO - 10.1364/cleo.2010.cwb2

M3 - Conference contribution

AN - SCOPUS:85086494102

SN - 9781557528896

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2010

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Abstract

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Other

ASJC Scopus subject areas

Access to Document

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