Ultraprecision surface flattening of porous silicon by diamond turning

Porous silicon is receiving increasing interest from a wide range of scientific and technological fields due to its excellent material properties. In this study, we attempted ultraprecision surface flattening of porous silicon by diamond turning and investigated the fundamental material removal mechanism. Scanning electron microscopy and laser Raman spectroscopy of the machined surface showed that the mechanisms of material deformation and phase transformation around the pores were greatly different from those of bulk single-crystal silicon. The mechanism of cutting was strongly dependent on the direction of cutting with respect to pore edge orientation. Crack propagation was dominant near specific pore edges due to the release of hydrostatic pressure that was essential for ductile machining. Wax was used as an infiltrant to coat the workpiece before machining, and it was found that the wax not only prevented chips from entering the pores, but also contributed to suppress brittle fractures around the pores. The machined surface showed a nanometric surface flatness with open pores, demonstrating the possibility of fabricating high-precision porous silicon components by diamond turning.