Understanding of a Pt thin-film H2 sensor under working conditions using AP-XPS and XAFS

  • Ryo Toyoshima
  • , Takahisa Tanaka
  • , Taro Kato
  • , Hitoshi Abe
  • , Ken Uchida
  • , Hiroshi Kondoh

Research output: Contribution to journalArticlepeer-review

Abstract

The operating principle of a Pt thin-film H2 gas sensor was investigated using a combination of surface sensitive ambient-pressure X-ray photoelectron spectroscopy and bulk sensitive X-ray absorption fine structure techniques, which provided chemical and structure information under working conditions, coupled with electric resistivity measurements. It is shown that the sensor response was in a linear relation with both coverages of H and O atoms on the Pt surface. Moreover, the bulk structure of Pt remains unchanged under H2 exposure. These observations support that the resistivity change is associated with electron scattering in the near-surface region.

Original languageEnglish
Article numberupad031
JournalChemistry Letters
Volume53
Issue number2
DOIs
Publication statusPublished - 2024 Feb

Keywords

  • gas sensor
  • operando analysis
  • surface

ASJC Scopus subject areas

  • General Chemistry

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