Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh; Nobuaki Yasutake; Yukio Nakabayashi; Ken Uchida; Toshinori Numata

doi:10.1109/IEDM.2009.5424318

Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and I_dsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (v_sat). It is found that v _sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both I_dlin and I_dsat at highly-strained conditions.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	19.5.1-19.5.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424318
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/12/7 → 09/12/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2009.5424318

Cite this

Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2009). Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 19.5.1-19.5.4). Article 5424318 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424318

Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. / Saitoh, Masumi; Yasutake, Nobuaki; Nakabayashi, Yukio et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 19.5.1-19.5.4 5424318 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saitoh, M, Yasutake, N, Nakabayashi, Y, Uchida, K & Numata, T 2009, Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424318, Technical Digest - International Electron Devices Meeting, IEDM, pp. 19.5.1-19.5.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424318

Saitoh M, Yasutake N, Nakabayashi Y, Uchida K, Numata T. Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 19.5.1-19.5.4. 5424318. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424318

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abstract = "We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.",

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AU - Numata, Toshinori

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AB - We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

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Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

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