Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

S. Matsuo; K. Tateno; T. Nakahara; H. Tsuda; T. Kurokawa

doi:10.1049/el:19970752

Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

S. Matsuo
, K. Tateno
, T. Nakahara
, H. Tsuda
, T. Kurokawa

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.

Original language	English
Pages (from-to)	1148-1149
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	13
DOIs	https://doi.org/10.1049/el:19970752
Publication status	Published - 1997 Jun 19
Externally published	Yes

Keywords

Integrated optoelectronics
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19970752

Cite this

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title = "Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate",

abstract = "The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.",

keywords = "Integrated optoelectronics, Vertical cavity surface emitting lasers",

author = "S. Matsuo and K. Tateno and T. Nakahara and H. Tsuda and T. Kurokawa",

year = "1997",

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day = "19",

doi = "10.1049/el:19970752",

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AU - Matsuo, S.

AU - Tateno, K.

AU - Nakahara, T.

AU - Tsuda, H.

AU - Kurokawa, T.

PY - 1997/6/19

Y1 - 1997/6/19

N2 - The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.

AB - The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.

KW - Integrated optoelectronics

KW - Vertical cavity surface emitting lasers

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UR - https://www.scopus.com/pages/publications/0031167761#tab=citedBy

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DO - 10.1049/el:19970752

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SN - 0013-5194

VL - 33

SP - 1148

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JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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