Abstract
Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.
Original language | English |
---|---|
Pages (from-to) | 269-273 |
Number of pages | 5 |
Journal | Optical Review |
Volume | 16 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 May |
Keywords
- Charged exciton
- Finite-difference time-domain calculation method
- Interfacial fluctuation quantum dot
- Multi exciton
- Near-field scanning microscope
- Photoluminescence imaging spectroscopy
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics