TY - GEN
T1 - Wireless proximity communications for 3D system integration
AU - Kuroda, Tadahiro
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Capacitive and inductive coupling I/Os are emerging non-contact parallel links for chips that are stacked in a package. The capacitive coupling utilizes a pair of electrodes that are formed by top layer of IC interconnections. The inductive coupling uses coils, just like a transformer, that are rolled by the IC interconnections. They are implemented by digital circuits in a standard CMOS. No new wafer process or mechanical process is required, and hence inexpensive. Since there is no pad exposed for contact, ESD protection structure can be removed. Chips under difference supply voltages can be directly connected, since they provide with an AC-coupling interface. This paper presents fundamental differences between the inductive coupling and the capacitive coupling. Secondly, advantages of the inductive coupling over Through-Silicon-Vias and micro-bumps are discussed. Circuit techniques to raise aggregated data rate to 1Tb/s, and lower energy dissipation to 0.14pJ/b are presented. Future challenges and opportunities such as a 3D scaling scenario are described.
AB - Capacitive and inductive coupling I/Os are emerging non-contact parallel links for chips that are stacked in a package. The capacitive coupling utilizes a pair of electrodes that are formed by top layer of IC interconnections. The inductive coupling uses coils, just like a transformer, that are rolled by the IC interconnections. They are implemented by digital circuits in a standard CMOS. No new wafer process or mechanical process is required, and hence inexpensive. Since there is no pad exposed for contact, ESD protection structure can be removed. Chips under difference supply voltages can be directly connected, since they provide with an AC-coupling interface. This paper presents fundamental differences between the inductive coupling and the capacitive coupling. Secondly, advantages of the inductive coupling over Through-Silicon-Vias and micro-bumps are discussed. Circuit techniques to raise aggregated data rate to 1Tb/s, and lower energy dissipation to 0.14pJ/b are presented. Future challenges and opportunities such as a 3D scaling scenario are described.
KW - Inductive coupling
KW - Proximity communication
KW - SiP
UR - http://www.scopus.com/inward/record.url?scp=49949098251&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49949098251&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2007.4443910
DO - 10.1109/RFIT.2007.4443910
M3 - Conference contribution
AN - SCOPUS:49949098251
SN - 1424413079
SN - 9781424413072
T3 - RFIT 2007 - IEEE International Workshop on Radio-Frequency Integration Technology
SP - 21
EP - 25
BT - RFIT 2007 - IEEE International Workshop on Radio-Frequency Integration Technology
T2 - IEEE International Workshop on Radio-Frequency Integration Technology, RFIT 2007
Y2 - 9 December 2007 through 11 December 2007
ER -