XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface

Yoshihiro Saito, Shigeaki Uemura, Tomohiro Kagiyama, Ryo Toyoshima

Research output: Contribution to journalArticlepeer-review

Abstract

The state of the pre-sputtered indium phosphide (InP) surface was analyzed by X-ray photoelectron spectroscopy, employing synchrotron-based relatively low-energy X-ray. It was found that the pre-sputtering treatment induced the phosphorus vaporization and made the surface composition In-rich, which was thought to promote oxidation of InP surface in atmosphere. The state of the interface between InP and Pt was also investigated nondestructively, by using hard X-ray photoemission spectroscopy. As a result, it was demonstrated that the interfacial layer was composed of the native oxide (In-O, P-O) and metallic state (In-Pt or In-In, P-P) and that the pre-sputtering treatment increased significantly the amount of the P-O, In-Pt or In-In, and P-P. From a simplified calculation, assuming a Pt/In-Pt/In-P layer stacking structure and neglecting the In-O and P-O components, the thickness of the interfacial layer was estimated to be approximately 3.0 nm.

Original languageEnglish
Article number031005
JournalJapanese journal of applied physics
Volume61
Issue number3
DOIs
Publication statusPublished - 2022 Mar

Keywords

  • HAXPES
  • InP
  • Pt
  • XPS
  • interface
  • surface

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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