ZnO growth on Si by radical source MBE

K. Iwata; P. Fons; S. Niki; A. Yamada; K. Matsubara; K. Nakahara; T. Tanabe; H. Takasu

doi:10.1016/S0022-0248(00)00057-9

ZnO growth on Si by radical source MBE

K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, T. Tanabe, H. Takasu

Research output: Contribution to journal › Conference article › peer-review

133 Citations (Scopus)

Abstract

The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(111) has been carried out using NH₃ plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 × 10¹⁸ cm^-3.

Original language	English
Pages (from-to)	50-54
Number of pages	5
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00057-9
Publication status	Published - 2000 Jun 2
Externally published	Yes
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00057-9

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title = "ZnO growth on Si by radical source MBE",

abstract = "The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(111) has been carried out using NH3 plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 × 1018 cm-3.",

author = "K. Iwata and P. Fons and S. Niki and A. Yamada and K. Matsubara and K. Nakahara and T. Tanabe and H. Takasu",

year = "2000",

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doi = "10.1016/S0022-0248(00)00057-9",

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pages = "50--54",

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note = "The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - ZnO growth on Si by radical source MBE

AU - Iwata, K.

AU - Fons, P.

AU - Niki, S.

AU - Yamada, A.

AU - Matsubara, K.

AU - Nakahara, K.

AU - Tanabe, T.

AU - Takasu, H.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(111) has been carried out using NH3 plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 × 1018 cm-3.

AB - The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(111) has been carried out using NH3 plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 × 1018 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0033706497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033706497&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00057-9

DO - 10.1016/S0022-0248(00)00057-9

M3 - Conference article

AN - SCOPUS:0033706497

SN - 0022-0248

VL - 214

SP - 50

EP - 54

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

ZnO growth on Si by radical source MBE

Abstract

ASJC Scopus subject areas

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