ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

K. Matsubara; P. Fons; K. Iwata; A. Yamada; K. Sakurai; H. Tampo; S. Niki

doi:10.1016/S0040-6090(03)00243-8

ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

K. Matsubara, P. Fons, K. Iwata, A. Yamada, K. Sakurai, H. Tampo, S. Niki

Research output: Contribution to journal › Conference article › peer-review

261 Citations (Scopus)

Abstract

Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10^-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10^-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se₂ thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.

Original language	English
Pages (from-to)	369-372
Number of pages	4
Journal	Thin Solid Films
Volume	431-432
DOIs	https://doi.org/10.1016/S0040-6090(03)00243-8
Publication status	Published - 2003 May 1
Externally published	Yes
Event	Proceedings of Symposium B - Strasbourg, France Duration: 2002 Jun 18 → 2002 Jun 21

Keywords

Pulsed laser deposition
Solar cells
Transparent conducting oxide
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0040-6090(03)00243-8

Cite this

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title = "ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications",

abstract = "Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.",

keywords = "Pulsed laser deposition, Solar cells, Transparent conducting oxide, Zinc oxide",

author = "K. Matsubara and P. Fons and K. Iwata and A. Yamada and K. Sakurai and H. Tampo and S. Niki",

year = "2003",

month = may,

day = "1",

doi = "10.1016/S0040-6090(03)00243-8",

language = "English",

volume = "431-432",

pages = "369--372",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "Proceedings of Symposium B ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

AU - Matsubara, K.

AU - Fons, P.

AU - Iwata, K.

AU - Yamada, A.

AU - Sakurai, K.

AU - Tampo, H.

AU - Niki, S.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.

AB - Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.

KW - Pulsed laser deposition

KW - Solar cells

KW - Transparent conducting oxide

KW - Zinc oxide

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U2 - 10.1016/S0040-6090(03)00243-8

DO - 10.1016/S0040-6090(03)00243-8

M3 - Conference article

AN - SCOPUS:17144469759

SN - 0040-6090

VL - 431-432

SP - 369

EP - 372

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium B

Y2 - 18 June 2002 through 21 June 2002

ER -

ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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