ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

K. Matsubara, P. Fons, K. Iwata, A. Yamada, K. Sakurai, H. Tampo, S. Niki

Research output: Contribution to journalConference articlepeer-review

261 Citations (Scopus)


Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2003 May 1
Externally publishedYes
EventProceedings of Symposium B - Strasbourg, France
Duration: 2002 Jun 182002 Jun 21


  • Pulsed laser deposition
  • Solar cells
  • Transparent conducting oxide
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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