This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.
|ジャーナル||IEICE Transactions on Electronics|
|出版ステータス||Published - 1998|
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