抄録
This paper describes a 160-Gbit/s high-speed multi-chip ATM switching system for broadband ISDN. This system uses a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layer ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a MCM using the 15-μ m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is used. The system switches ATM cells at a thoughtput of up to 320 Gbit/s and it is applicable for future B-ISDN.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 855-862 |
| ページ数 | 8 |
| ジャーナル | NTT R and D |
| 巻 | 45 |
| 号 | 9 |
| 出版ステータス | Published - 1996 12月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学