1=f noise characteristics of fin-type field-effect transistors in saturation region

Hideo Sakai, Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara, Hiroki Ishikuro

研究成果: Article査読

3 被引用数 (Scopus)

抄録

In this work, we measured 1=f noise of independent-double-gate-(IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate-(CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (Id). First, we measured relationship between characteristic of the normalized 1=f noise by Id (SId =I2 d ) and characteristic of Id. Both the SId =I2 d of IDG-and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1=f noise and vertical electric field (Ei) of surface of gate oxide film. As a result we could not definitely see a large margin of 1=f noise between CDG-and IDG-modes from Ei. This work also discovered that 1=f noise was greatly influenced by Id density.

本文言語English
論文番号04CC23
ジャーナルJapanese journal of applied physics
52
4 PART 2
DOI
出版ステータスPublished - 2013 4月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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